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Model IRLD120PBF
Description Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4
Product QR code
Brand: Vishay Intertechnology
Packaging DIP
Delivery time
Packaging method
Standard packaging quantity 1
2.74  yuan 2.74yuan
5+:
$ 3.6936
25+:
$ 3.4200
50+:
$ 3.2285
100+:
$ 3.1464
500+:
$ 3.0917
2500+:
$ 3.0233
5000+:
$ 2.9959
10000+:
$ 2.9549
Quantity
5+
25+
50+
100+
500+
Price
$3.6936
$3.4200
$3.2285
$3.1464
$3.0917
Price $ 3.6936 $ 3.4200 $ 3.2285 $ 3.1464 $ 3.0917
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2456) Minimum order quantity(5)
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Technical parameters/drain source resistance: 270 mΩ

Technical parameters/dissipated power: 1.3 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/working junction temperature (Max): 150 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: DIP

External dimensions/packaging: DIP

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2014/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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