Technical parameters/digits: 8
Technical parameters/access time (Max): 25000 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Package parameters/number of pins: 63
Encapsulation parameters/Encapsulation: TFBGA-63
External dimensions/packaging: TFBGA-63
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NAND01GR3B2BZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2BZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2CZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2CZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GW3B2AZA6E
|
ST Microelectronics | 完全替代 | VFBGA-63 |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
|
|
Micron | 完全替代 | BGA |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
|
|
Numonyx | 功能相似 | VFBGA-63 |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
|
|
ST Microelectronics | 功能相似 | TFBGA |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
NAND01GW3B2BZA6F
|
ST Microelectronics | 功能相似 | TFBGA |
1千兆, 2千兆, 2112字节/ 1056字页, 1.8V / 3V , NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
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