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Model NAND01GW3B2BZA6E
Description 1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
Product QR code
Brand: Numonyx
Packaging VFBGA-63
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3801) Minimum order quantity(1)
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Technical parameters/power supply current:

30 mA

 

Technical parameters/power supply voltage:

2.7V ~ 3.6V

 

Package parameters/number of pins:

63

 

Encapsulation parameters/Encapsulation:

VFBGA-63

 

Dimensions/Packaging:

VFBGA-63

 

Physical parameters/operating temperature:

-40℃ ~ 85℃

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NAND01GR3B2BZA6E NAND01GR3B2BZA6E Numonyx 功能相似 VFBGA-63
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
PDF
NAND01GR3B2BZA6E NAND01GR3B2BZA6E Micron 功能相似 TFBGA-63
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
PDF
NAND01GR3B2CZA6E NAND01GR3B2CZA6E Micron 功能相似 TFBGA-63
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF
NAND01GR3B2CZA6E NAND01GR3B2CZA6E Numonyx 功能相似 VFBGA-63
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF
NAND01GW3B2AZA6E NAND01GW3B2AZA6E ST Microelectronics 功能相似 VFBGA-63
NAND闪存 NAND MEDIA FLASH
PDF
NAND01GW3B2AZA6E NAND01GW3B2AZA6E Micron 功能相似 BGA
NAND闪存 NAND MEDIA FLASH
PDF
NAND01GW3B2BZA6E NAND01GW3B2BZA6E Numonyx 功能相似 VFBGA-63
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
PDF
NAND01GW3B2BZA6E NAND01GW3B2BZA6E ST Microelectronics 功能相似 TFBGA
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
PDF
NAND01GW3B2CZA6E NAND01GW3B2CZA6E Numonyx 功能相似 VFBGA-63
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF
NAND01GW3B2CZA6E NAND01GW3B2CZA6E ST Microelectronics 功能相似 TFBGA
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2CZA6E NAND01GW3B2CZA6E Micron 功能相似 TFBGA-63
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF

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