Technical parameters/power supply voltage (DC): | 3.30 V, 3.60 V (max) |
|
Technical parameters/memory capacity: | 1000000000 B |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/power supply voltage: | 2.7V ~ 3.6V |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | VFBGA-63 |
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Dimensions/Packaging: | VFBGA-63 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NAND01GR3B2BZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2BZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2CZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2CZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
|
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
|
|
ST Microelectronics | 功能相似 | TFBGA |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GW3B2BZA6F
|
ST Microelectronics | 完全替代 | TFBGA |
NAND Flash Parallel 3V/3.3V 1Gbit 128M x 8Bit 25us 63Pin VFBGA T/R
|
||
|
|
Numonyx | 完全替代 | VFBGA-63 |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
|
|
ST Microelectronics | 完全替代 | TFBGA |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
NAND01GW3B2CZA6E
|
Micron | 完全替代 | TFBGA-63 |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
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