Technical parameters/digits: | 8 |
|
Technical parameters/access time (Max): | 25000 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/power supply voltage: | 1.7V ~ 1.95V |
|
Package parameters/number of pins: | 63 |
|
Encapsulation parameters/Encapsulation: | TFBGA-63 |
|
Dimensions/Packaging: | TFBGA-63 |
|
Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NAND01GR3B2BZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2BZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2BZA6F
|
Micron | 功能相似 | BGA |
NAND Flash Parallel 1.8V 1G-bit 128M x 8 25us 63-Pin VFBGA T/R
|
||
|
|
ST Microelectronics | 功能相似 | TFBGA |
Flash, 128MX8, 25000ns, PBGA63, 9 X 11MM, 1MM HEIGHT, 0.8MM PITCH, LEAD FREE, VFBGA-63
|
||
NAND01GR3B2CZA6F
|
Numonyx | 功能相似 | TFBGA |
Flash, 128MX8, 25000ns, PBGA63, 9 X 11MM, 1MM HEIGHT, 0.8MM PITCH, LEAD FREE, VFBGA-63
|
||
NAND01GW3B2AZA6E
|
ST Microelectronics | 功能相似 | VFBGA-63 |
NAND闪存 NAND MEDIA FLASH
|
||
|
|
Micron | 功能相似 | BGA |
NAND闪存 NAND MEDIA FLASH
|
||
|
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
|
|
ST Microelectronics | 功能相似 | TFBGA |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
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