Technical parameters/digits: | 8 |
|
Technical parameters/access time (Max): | 25000 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Package parameters/number of pins: | 63 |
|
Encapsulation parameters/Encapsulation: | BGA |
|
Dimensions/Packaging: | BGA |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NAND01GR3B2BZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2BZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2CZA6E
|
Micron | 功能相似 | TFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GR3B2CZA6E
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
|
|
Numonyx | 功能相似 | VFBGA-63 |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
|
|
ST Microelectronics | 功能相似 | TFBGA |
1-Gbit, 2-Gbit, 2112Byte/1056-word page, 1.8V/3V, NAND flash memory
|
||
NAND01GW3B2BZA6F
|
ST Microelectronics | 完全替代 | TFBGA |
NAND Flash Parallel 3V/3.3V 1Gbit 128M x 8Bit 25us 63Pin VFBGA T/R
|
||
|
|
Numonyx | 完全替代 | VFBGA-63 |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
|
|
ST Microelectronics | 完全替代 | TFBGA |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
||
NAND01GW3B2CZA6E
|
Micron | 完全替代 | TFBGA-63 |
NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 63Pin VFBGA Tray
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review