Technical parameters/number of pins: 8
Technical parameters/forward voltage: 750 mV
Technical parameters/drain source resistance: 0.0085 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 9.5A
Technical parameters/rise time: 11 ns
Technical parameters/rated power (Max): 1.4 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Design
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IFA | 功能相似 |
INFINEON IRF8714PBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
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IRF8714PBF
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International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF8714PBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
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IRF8714PBF
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Infineon | 功能相似 | SOIC-8 |
INFINEON IRF8714PBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
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SI4420BDY-T1-GE3
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Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 9.5A 8-SOIC
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SI4420BDY-T1-GE3
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VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 9.5A 8-SOIC
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SI4420BDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 9.5A 8-SOIC
|
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