Technical parameters/drain source resistance: 0.011 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 13.5 A
Technical parameters/rise time: 11 ns
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4420BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
|
||
SI4420BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
|
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