Technical parameters/rated power: 2.5 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0087 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 14A
Technical parameters/rise time: 9.9 ns
Technical parameters/Input capacitance (Ciss): 1020pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Power management, Battery Protection, Load Switch High Side, Load Switch Low Side
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6682
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6682 晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
|
||
FDS6682
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6682 晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
|
||
IRF7413PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7413PBF 晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V
|
||
IRF7413PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7413PBF 晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V
|
||
IRF8714TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
N沟道 30 V 2.5 W 8.1 nC 功率Mosfet 表面贴装 - SOIC-8
|
||
IRF8714TRPBF
|
Infineon | 类似代替 | SOIC-8 |
N沟道 30 V 2.5 W 8.1 nC 功率Mosfet 表面贴装 - SOIC-8
|
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