Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 13.0 A |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/product series: | IRF7413 |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
|
Technical parameters/Continuous drain current (Ids): | 13.0 A |
|
Technical parameters/rise time: | 8.00 ns |
|
Technical parameters/Input capacitance (Ciss): | 1800pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7413TRPBF
|
International Rectifier | 完全替代 | SOIC-8 |
INFINEON IRF7413TRPBF 晶体管, MOSFET, N沟道, 13 A, 30 V, 0.011 ohm, 10 V, 3 V
|
||
IRF7805PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7805PBF 晶体管, MOSFET, N沟道, 13 A, 30 V, 11 mohm, 4.5 V, 3 V
|
||
|
|
IFA | 类似代替 |
INFINEON IRF8714PBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
|
|||
IRF8714PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF8714PBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
|
||
IRF8714PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF8714PBF 晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
|
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