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Model SI4420BDY-T1-GE3
Description MOSFET N-CH 30V 9.5A 8-SOIC
Product QR code
Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.65  yuan 2.65yuan
5+:
$ 3.5708
25+:
$ 3.3063
50+:
$ 3.1211
100+:
$ 3.0418
500+:
$ 2.9889
2500+:
$ 2.9227
5000+:
$ 2.8963
10000+:
$ 2.8566
Quantity
5+
25+
50+
100+
500+
Price
$3.5708
$3.3063
$3.1211
$3.0418
$2.9889
Price $ 3.5708 $ 3.3063 $ 3.1211 $ 3.0418 $ 2.9889
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1988) Minimum order quantity(5)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.4W (Ta)

Technical parameters/drain source voltage (Vds): 30.0 V

Technical parameters/Continuous drain current (Ids): 13.5 A

Technical parameters/dissipated power (Max): 1.4W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4420BDY-T1-E3 SI4420BDY-T1-E3 Vishay Siliconix 类似代替 SOIC-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
PDF
SI4420BDY-T1-E3 SI4420BDY-T1-E3 VISHAY 类似代替 SOIC-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
PDF

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