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Model SI4420BDY-T1-GE3
Description SOIC-8 N-CH 30V 9.5A 8.5mΩ
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Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7864) Minimum order quantity(1)
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Technical parameters/drain source resistance: 8.5 mΩ

Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 9.5A

Technical parameters/rise time: 11 ns

Technical parameters/rated power (Max): 1.4 W

Technical parameters/descent time: 12 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2500 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4420BDY-T1-E3 SI4420BDY-T1-E3 Vishay Siliconix 类似代替 SOIC-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
PDF
SI4420BDY-T1-E3 SI4420BDY-T1-E3 VISHAY 类似代替 SOIC-8
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
PDF

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