Technical parameters/drain source resistance: 0.05 Ω
Technical parameters/dissipated power: 1.56 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.56W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4488DY-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
|
||
SI4488DY-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
|
||
SI4488DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
||
SI4488DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
||
SI4488DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
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