Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.041 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.56 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 3.5A
Technical parameters/rise time: 7 ns
Technical parameters/rated power (Max): 1.56 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1560 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4488DY-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
|
||
|
SI4488DY-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
|
||
|
|
Vishay Intertechnology | 功能相似 | SO-8 |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
||
SI4488DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review