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Model SI4488DY-E3
Description MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2310) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.041 Ω

Technical parameters/dissipated power: 1.56 W

Technical parameters/leakage source breakdown voltage: 150 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4488DY-T1-E3 SI4488DY-T1-E3 Vishay Intertechnology 类似代替 SO-8
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
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SI4488DY-T1-E3 SI4488DY-T1-E3 Vishay Siliconix 类似代替 SO-8
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
PDF
SI4488DY-T1-GE3 SI4488DY-T1-GE3 Vishay Semiconductor 功能相似 SOIC
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
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SI4488DY-T1-GE3 SI4488DY-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
PDF
SI4488DY-T1-GE3 SI4488DY-T1-GE3 VISHAY 功能相似 SOIC-8
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
PDF

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