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Description VISHAY SI4488DY-T1-GE3 Transistor, MOSFET, N-channel, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
Product QR code
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
5.95  yuan 5.95yuan
10+:
$ 7.1400
100+:
$ 6.7830
500+:
$ 6.5450
1000+:
$ 6.5331
2000+:
$ 6.4855
5000+:
$ 6.4260
7500+:
$ 6.3784
10000+:
$ 6.3546
Quantity
10+
100+
500+
1000+
2000+
Price
$7.1400
$6.7830
$6.5450
$6.5331
$6.4855
Price $ 7.1400 $ 6.7830 $ 6.5450 $ 6.5331 $ 6.4855
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8475) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.041 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 150 V

Technical parameters/Continuous drain current (Ids): 5.00 A

Technical parameters/rise time: 7 ns

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4488DY-E3 SI4488DY-E3 Vishay Semiconductor 功能相似 SO-8
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
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SI4488DY-E3 SI4488DY-E3 Vishay Siliconix 功能相似 SO-8
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
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SI4488DY-T1-E3 SI4488DY-T1-E3 Vishay Intertechnology 功能相似 SO-8
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
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