Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.56W (Ta)
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/dissipated power (Max): 1.56W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4488DY-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
|
||
SI4488DY-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ω; ID 3.5A; SO-8; PD 1.56W; VGS +/-20V
|
||
|
|
Vishay Intertechnology | 功能相似 | SO-8 |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
||
SI4488DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
Trans MOSFET N-CH 150V 3.5A 8Pin SOIC N T/R
|
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