Technical parameters/drain source resistance: 5.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/leakage source breakdown voltage: 12.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 32 ns
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7456
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 20V 16A 8Pin SOIC
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IRF7456
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International Rectifier | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 20V 16A 8Pin SOIC
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IRF7456TRPBF
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Infineon | 功能相似 | SOIC-8 |
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.0047Ω; ID 16A; SO-8; PD 2.5W; VGS +/-12V; -55
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SI4866DY
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Vishay Semiconductor | 功能相似 | SO |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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SI4866DY
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Vishay Siliconix | 功能相似 | SO |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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SI4866DY
|
Visay | 功能相似 | SOIC-8 |
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SI4866DY-T1
|
Vishay Siliconix | 功能相似 | SO-8 |
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|
||
SI4866DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 12V 11A 8Pin SOIC N T/R
|
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