Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 16.0 A
Technical parameters/drain source resistance: 4.70 mΩ
Technical parameters/product series: IRF7456
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0V (min)
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/rise time: 25.0 ns
Technical parameters/Input capacitance (Ciss): 3640pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7456
|
Infineon | 类似代替 | SOIC-8 |
SOIC N-CH 20V 16A
|
||
IRF7456
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC N-CH 20V 16A
|
||
IRF7456TRPBF
|
Infineon | 类似代替 | SOIC-8 |
IRF7456TRPBF 编带
|
||
SI4866DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
SOIC-8 N-CH 12V 17A 5.5mΩ
|
||
SI4866DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
SOIC-8 N-CH 12V 17A 5.5mΩ
|
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