Technical parameters/rated voltage (DC): | 20.0 V |
|
Technical parameters/rated current: | 16.0 A |
|
Technical parameters/drain source resistance: | 4.70 mΩ |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/product series: | IRF7456 |
|
Technical parameters/drain source voltage (Vds): | 20.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 20.0V (min) |
|
Technical parameters/Continuous drain current (Ids): | 16.0 A |
|
Technical parameters/rise time: | 25 ns |
|
Technical parameters/Input capacitance (Ciss): | 3640pF @15V(Vds) |
|
Technical parameters/descent time: | 52 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7456
|
Infineon | 类似代替 | SOIC-8 |
SOIC N-CH 20V 16A
|
||
IRF7456
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC N-CH 20V 16A
|
||
IRF7456TRPBF
|
Infineon | 类似代替 | SOIC-8 |
IRF7456TRPBF 编带
|
||
SI4866DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
SOIC-8 N-CH 12V 17A 5.5mΩ
|
||
SI4866DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
SOIC-8 N-CH 12V 17A 5.5mΩ
|
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