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Description NChannel reduced Qg, fast switching MOSFET N-Channel reduced Qg, fast switching MOSFET
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Packaging SO
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3131) Minimum order quantity(1)
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Technical parameters/drain source resistance: 5.50 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.00 W

Technical parameters/leakage source breakdown voltage: 12.0 V

Technical parameters/breakdown voltage of gate source: ±8.00 V

Technical parameters/Continuous drain current (Ids): 17.0 A

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

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