Technical parameters/drain source resistance: 5.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.00 W
Technical parameters/leakage source breakdown voltage: 12.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4866DY-T1
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 12V 17A 1.6W
|
||
SI4866DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 12V 11A 8-SOIC
|
||
SI4866DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET N-CH 12V 11A 8-SOIC
|
||
SI4866DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 12V 11A 8Pin SOIC N T/R
|
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