Technical parameters/dissipated power: 1.6 W
Technical parameters/rise time: 32 ns
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4866DY-T1
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 12V 17A 1.6W
|
||
SI4866DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 12V 11A 8-SOIC
|
||
SI4866DY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET N-CH 12V 11A 8-SOIC
|
||
SI4866DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 12V 11A 8Pin SOIC N T/R
|
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