Technical parameters/drain source resistance: 0.011 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.46 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4134DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V
|
||
SI4134DY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V
|
||
SI4134DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4134DY-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V
|
||
SI4410BDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
VISHAY SI4410BDY-T1-GE3 场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
|
||
SI4894BDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI4894BDY-T1-GE3 场效应管, MOSFET, N沟道, 30V, 12A
|
||
SI4894BDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY SI4894BDY-T1-GE3 场效应管, MOSFET, N沟道, 30V, 12A
|
||
SI4894BDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
VISHAY SI4894BDY-T1-GE3 场效应管, MOSFET, N沟道, 30V, 12A
|
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