Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.016 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN4800LSSL
|
Vishay Semiconductor | 类似代替 | SOIC |
DIODES INC. DMN4800LSSL 晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
|
||
IRF8707PBF
|
Infineon | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
|
||
IRF8707PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
|
||
SI4894BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 8.9A 8-SOIC
|
||
SI4894BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 8.9A 8-SOIC
|
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