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Model IRF8707PBF

Description N Channel power MOSFETs 8A to 12A, Infineon Infineon series split HEXFET ® Power MOSFETs include N-channel devices, which are surface mounted and lead packaged. The shape factor can solve most board layout and thermal design challenges. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.

Brand: Infineon

Packaging SOIC-8

Delivery time

Packaging method Tube

Standard packaging quantity 1

10+:

$ 0.7938

50+:

$ 0.7526

100+:

$ 0.7232

300+:

$ 0.7056

500+:

$ 0.6880

1000+:

$ 0.6703

2500+:

$ 0.6439

5000+:

$ 0.6380

Price	$ 0.7938	$ 0.7526	$ 0.7232	$ 0.7056	$ 0.6880
Start batch production	10+	50+	100+	300+	500+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(8581) Minimum order quantity(10)

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Technical parameters/rated power: 2.5 W

Technical parameters/drain source resistance: 0.0119 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 1.8 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 11A

Technical parameters/rise time: 7.9 ns

Technical parameters/Input capacitance (Ciss): 760pF @15V(Vds)

Technical parameters/descent time: 4.4 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC-8

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Load Switch High Side, Battery Protection, Load Switch Low Side

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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