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Description Trans MOSFET N-CH 30V 11A 8Pin SOIC T/R
Product QR code
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.56  yuan 1.56yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6954) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

17.5 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/product series:

IRF8707G

 

Technical parameters/threshold voltage:

1.8 V

 

Technical parameters/Input capacitance:

760pF @15V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Length:

5 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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IRF8707PBF IRF8707PBF International Rectifier 类似代替 SOIC-8
N 通道功率 MOSFET 8A 至 12A,Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备,采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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