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Model SI4410BDY-T1-GE3
Description VISHAY SI4410BDY-T1-GE3 Field effect transistor, MOSFET, N-channel, 10A, 30V, 2.5W
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
2.8  yuan 2.8yuan
5+:
$ 3.7760
25+:
$ 3.4963
50+:
$ 3.3005
100+:
$ 3.2166
500+:
$ 3.1606
2500+:
$ 3.0907
5000+:
$ 3.0627
10000+:
$ 3.0208
Quantity
5+
25+
50+
100+
500+
Price
$3.7760
$3.4963
$3.3005
$3.2166
$3.1606
Price $ 3.7760 $ 3.4963 $ 3.3005 $ 3.2166 $ 3.1606
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3021) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.02 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 10.0 A

Technical parameters/rise time: 10 ns

Technical parameters/descent time: 15 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: Exempt

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