Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10.0 A, 7.50 A
Technical parameters/rise time: 10 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8707PBF
|
Infineon | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
|
||
IRF8707PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
|
||
SI4410BDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
|
||
SI4418DY-T1-E3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 200V 2.3A 8-SOIC
|
||
SI4490DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
|
||
SI4490DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review