Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.8 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 4.00 A |
|
Technical parameters/rise time: | 20 ns |
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Technical parameters/descent time: | 25 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1560 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Height: | 1.55 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4490DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY SI4490DY-T1-GE3 晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
|
||
SI4490DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SI4490DY-T1-GE3 晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
|
||
SI4490DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY SI4490DY-T1-GE3 晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
|
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