Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.065 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 2.85 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4410BDY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4410BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4418DY-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH 200V 2.3A 8-SOIC
|
||
SI4490DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SI4490DY-T1-E3 场效应管, MOSFET, N沟道, 200V, 4A, SOIC
|
||
SI4490DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
VISHAY SI4490DY-T1-E3 场效应管, MOSFET, N沟道, 200V, 4A, SOIC
|
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