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Description VISHAY SI4490DY-T1-GE3 Transistor, MOSFET, N-channel, 2.85 A, 200 V, 65 Mohm, 10 V, 2 V
Product QR code
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
8.59  yuan 8.59yuan
10+:
$ 10.3056
100+:
$ 9.7903
500+:
$ 9.4468
1000+:
$ 9.4296
2000+:
$ 9.3609
5000+:
$ 9.2750
7500+:
$ 9.2063
10000+:
$ 9.1720
Quantity
10+
100+
500+
1000+
2000+
Price
$10.3056
$9.7903
$9.4468
$9.4296
$9.3609
Price $ 10.3056 $ 9.7903 $ 9.4468 $ 9.4296 $ 9.3609
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2518) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.065 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/Continuous drain current (Ids): 2.85 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SOIC-8

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Industrial, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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