Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.4W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8707PBF
|
Infineon | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
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||
IRF8707PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF8707PBF 场效应管, N 通道, MOSFET, 30V, 11A, SOIC 新
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SI4410BDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
|
||
SI4418DY-T1-E3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 200V 2.3A 8-SOIC
|
||
SI4490DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
|
||
SI4490DY-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
|
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