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Model SI4490DY-T1-GE3
Description MOSFET 200V 4A 3.1W 80mohm @ 10V
Product QR code
Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
8.52  yuan 8.52yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1450) Minimum order quantity(1)
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Technical parameters/dissipated power:

1.56W (Ta)

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/dissipated power (Max):

1.56W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4410BDY-T1-E3 SI4410BDY-T1-E3 Vishay Intertechnology 功能相似 SOIC-8
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
PDF
SI4410BDY-T1-E3 SI4410BDY-T1-E3 Vishay Siliconix 功能相似 SO-8
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
PDF
SI4410BDY-T1-E3 SI4410BDY-T1-E3 Vishay Semiconductor 功能相似 SOIC-8
TRANSISTOR 7500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
PDF
SI4418DY-T1-E3 SI4418DY-T1-E3 VISHAY 类似代替 SO-8
MOSFET N-CH 200V 2.3A 8-SOIC
PDF
SI4490DY-T1-E3 SI4490DY-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
VISHAY SI4490DY-T1-E3 场效应管, MOSFET, N沟道, 200V, 4A, SOIC
PDF
SI4490DY-T1-E3 SI4490DY-T1-E3 Vishay Intertechnology 类似代替 SO-8
VISHAY SI4490DY-T1-E3 场效应管, MOSFET, N沟道, 200V, 4A, SOIC
PDF

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