Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3 Ω
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 150pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
|
|
NJS | 功能相似 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
|||
BS170
|
GE | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
ON Semiconductor | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
||
TP0606N3-G-P002
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET P-CH 60V 0.32A 3Pin TO-92 T/R
|
||
TP0606N3-G-P003
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET P-CH 60V 0.32A 3Pin TO-92 T/R
|
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