Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7 Ω
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 150pF @25V(Vds)
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP0606N3-G
|
Microchip | 类似代替 | TO-92-3 |
晶体管, MOSFET, P沟道, -320 mA, -60 V, 3 ohm, -10 V, -2.4 V
|
||
TP0606N3-G
|
Supertex | 类似代替 | TO-92-3 |
晶体管, MOSFET, P沟道, -320 mA, -60 V, 3 ohm, -10 V, -2.4 V
|
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