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Model 2N6660
Description MOSFET N-CH 60V 0.99A TO-205
Product QR code
Brand: Vishay Siliconix
Packaging TO-205
Delivery time
Packaging method
Standard packaging quantity 1
153.2  yuan 153.2yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4833) Minimum order quantity(1)
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Technical parameters/drain source resistance:

3.00 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

725mW (Ta), 6.25W (Tc)

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

60.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

1.10 A

 

Technical parameters/Input capacitance (Ciss):

50pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

725mW (Ta), 6.25W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-205

 

Dimensions/Packaging:

TO-205

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6660 2N6660 Vishay Siliconix 类似代替 TO-205
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
PDF
2N6660 2N6660 Solid State 类似代替 TO-205
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
PDF
2N6660 2N6660 NJS 类似代替
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
PDF
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