Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 6.25 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 类似代替 | TO-205 |
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
|
||
2N6660
|
Solid State | 类似代替 | TO-205 |
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
|
||
|
|
NJS | 类似代替 |
场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39
|
|||
BS170
|
GE | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
ON Semiconductor | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
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