Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 6.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/Continuous drain current (Ids): 2A
Technical parameters/Input capacitance (Ciss): 499pF @25V(Vds)
Technical parameters/rated power (Max): 70 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBG20PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFBG20PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
功率MOSFET Power MOSFET
|
||
IRFBG20PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
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|
||
IRFBG20PBF
|
LiteOn | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
STU2NK100Z
|
ST Microelectronics | 完全替代 | TO-251-3 |
N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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