Technical parameters/drain source resistance: 11 Ω
Technical parameters/dissipated power: 54 W
Technical parameters/input capacitance: 500pF @25V
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/leakage source breakdown voltage: 1000 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBG20
|
IRF | 完全替代 |
MOSFET N-CH 1000V 1.4A TO-220AB
|
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IRFBG20PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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