Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 1.40 A
Technical parameters/rated power: 54 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 11.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 500pF @25V
Technical parameters/drain source voltage (Vds): 1 kV
Technical parameters/leakage source breakdown voltage: 1000 V
Technical parameters/Continuous drain current (Ids): 1.40 A
Technical parameters/rise time: 17.0 ns
Technical parameters/Input capacitance (Ciss): 500pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 54 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBG20
|
IRF | 完全替代 |
MOSFET N-CH 1000V 1.4A TO-220AB
|
|||
IRFBG20PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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