Technical parameters/dissipated power: | 54W (Tc) |
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Technical parameters/drain source voltage (Vds): | 1000 V |
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Technical parameters/Input capacitance (Ciss): | 500pF @25V(Vds) |
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Technical parameters/rated power (Max): | 54 W |
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Technical parameters/dissipated power (Max): | 54W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBG20
|
IRF | 完全替代 |
MOSFET N-CH 1000V 1.4A TO-220AB
|
|||
IRFBG20PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRFBG20PBF
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 1.4A I(D), 1000V, 11Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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