Technical parameters/drain source resistance: 6.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/rise time: 6.5 ns
Technical parameters/Input capacitance (Ciss): 499pF @25V(Vds)
Technical parameters/descent time: 32.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.4 mm
External dimensions/height: 6.9 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP2NK100Z
|
ST Microelectronics | 完全替代 | TO-220-3 |
STMICROELECTRONICS STP2NK100Z 功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
|
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