Technical parameters/rated power: 3.1 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): -1.10 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 200pF @25V(Vds)
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.8 mm
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9110
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TR
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TR
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL9110TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
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