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Model IRFL9110
Description -100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
Product QR code
Brand: International Rectifier
Packaging SOT-223
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2857) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): -100 V

Technical parameters/rated current: -1.10 A

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 2.00 W

Technical parameters/leakage source breakdown voltage: -100 V

Technical parameters/Continuous drain current (Ids): -1.10 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFL9110PBF IRFL9110PBF Vishay Siliconix 完全替代 TO-261-4
MOSFET P-CH 100V 1.1A SOT223
PDF
IRFL9110PBF IRFL9110PBF International Rectifier 完全替代 SOT-223
MOSFET P-CH 100V 1.1A SOT223
PDF
IRFL9110PBF IRFL9110PBF Vishay Semiconductor 完全替代 SOT-223
MOSFET P-CH 100V 1.1A SOT223
PDF
IRFL9110TR IRFL9110TR Vishay Siliconix 完全替代 TO-261-4
MOSFET P-CH 100V 1.1A SOT223
PDF
IRFL9110TR IRFL9110TR International Rectifier 完全替代 SOT-223
MOSFET P-CH 100V 1.1A SOT223
PDF
STN1NF10 STN1NF10 ST Microelectronics 功能相似 TO-261-4
STMICROELECTRONICS STN1NF10 晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
PDF

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