Technical parameters/dissipated power: | 2W (Ta), 3.1W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Input capacitance (Ciss): | 200pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 2W (Ta), 3.1W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Length: | 6.5 mm |
|
Dimensions/Width: | 3.5 mm |
|
Dimensions/Height: | 1.8 mm |
|
Dimensions/Packaging: | TO-261-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Discontinued at Digi-Key |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9110
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TR
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TR
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL9110TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
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