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Model IRFL9110
Description 功率MOSFET Power MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-223
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9298) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-100 V

 

Technical parameters/rated current:

-1.10 A

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

3.10 W

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

-100 V

 

Technical parameters/Continuous drain current (Ids):

1.10 A

 

Technical parameters/rise time:

27.0 ns

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-223

 

Dimensions/Packaging:

SOT-223

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFL9110PBF IRFL9110PBF Vishay Siliconix 完全替代 TO-261-4
MOSFET P-CH 100V 1.1A SOT223
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IRFL9110PBF IRFL9110PBF International Rectifier 完全替代 SOT-223
MOSFET P-CH 100V 1.1A SOT223
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IRFL9110PBF IRFL9110PBF Vishay Semiconductor 完全替代 SOT-223
MOSFET P-CH 100V 1.1A SOT223
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IRFL9110TR IRFL9110TR Vishay Siliconix 完全替代 TO-261-4
MOSFET P-CH 100V 1.1A SOT223
PDF
IRFL9110TR IRFL9110TR International Rectifier 完全替代 SOT-223
MOSFET P-CH 100V 1.1A SOT223
PDF
STN1NF10 STN1NF10 ST Microelectronics 功能相似 TO-261-4
STMICROELECTRONICS STN1NF10 晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
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