Technical parameters/dissipated power: 2W (Ta), 3.1W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 200pF @25V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 3.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9110
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110PBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110PBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110PBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL9110TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
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