Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -1.10 A
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 1.10 A
Technical parameters/rise time: 27.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL9110
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110PBF
|
Vishay Siliconix | 完全替代 | TO-261-4 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110PBF
|
International Rectifier | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110PBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
MOSFET P-CH 100V 1.1A SOT223
|
||
IRFL9110TRPBF
|
Vishay Semiconductor | 完全替代 | SOT-223 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
||
IRFL9110TRPBF
|
VISHAY | 完全替代 | TO-261-4 |
Trans MOSFET P-CH 100V 1.1A 4Pin(3+Tab) SOT-223 T/R
|
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