Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -18.0 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 88.0 W
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/Continuous drain current (Ids): -18.0 A
Technical parameters/rise time: 120 ns
Technical parameters/descent time: 58 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 88000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z34
|
International Rectifier | 类似代替 | TO-220 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34
|
VISHAY | 类似代替 | TO-220 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34
|
Kersemi Electronic | 类似代替 |
MOSFET P-CH 60V 18A TO-220AB
|
|||
IRF9Z34PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9Z34PBF
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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