Technical parameters/dissipated power: 88000 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 1100pF @25V(Vds)
Technical parameters/descent time: 58 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z34
|
International Rectifier | 类似代替 | TO-220 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34
|
VISHAY | 类似代替 | TO-220 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34
|
Kersemi Electronic | 类似代替 |
MOSFET P-CH 60V 18A TO-220AB
|
|||
IRF9Z34PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9Z34PBF
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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