Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 88 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 18A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z34
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
||
IRF9Z34
|
VISHAY | 功能相似 | TO-220 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
||
IRF9Z34
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
||
IRF9Z34
|
Kersemi Electronic | 功能相似 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
|||
IRF9Z34PBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34PBF
|
International Rectifier | 类似代替 | TO-220 |
MOSFET P-CH 60V 18A TO-220AB
|
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